Infineon 4 MB 45 ns NVRAM 44-Pin TSOP, CY14B104LA-ZS25XI

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Actuellement indisponible
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Options de conditionnement :
N° de stock RS:
194-9072
Référence fabricant:
CY14B104LA-ZS25XI
Fabricant:
Infineon
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Marque

Infineon

Product Type

NVRAM

Memory Size

4MB

Organisation

512 k x 8 Bit

Interface Type

Parallel

Data Bus Width

8bit

Maximum Random Access Time

45ns

Mount Type

Surface

Package Type

TSOP

Pin Count

44

Width

10.26 mm

Length

18.51mm

Standards/Approvals

No

Height

1.04mm

Maximum Operating Temperature

85°C

Minimum Supply Voltage

2.7V

Maximum Supply Voltage

3.6V

Automotive Standard

No

Number of Words

512K

Supply Current

70mA

Number of Bits per Word

8

Minimum Operating Temperature

-40°C

Pays d'origine :
PH
The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16-bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.

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