Infineon 4Mbit 45ns NVRAM, 44-Pin TSOP, CY14B104LA-ZS25XI
- N° de stock RS:
- 194-9071
- Référence fabricant:
- CY14B104LA-ZS25XI
- Fabricant:
- Infineon
Sous-total (1 plateau de 135 unités)*
4 042,98 €
(TVA exclue)
4 891,995 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 270 unité(s) expédiée(s) à partir du 06 janvier 2026
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Unité | Prix par unité | le plateau* |
|---|---|---|
| 135 + | 29,948 € | 4 042,98 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 194-9071
- Référence fabricant:
- CY14B104LA-ZS25XI
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Memory Size | 4Mbit | |
| Organisation | 512K x 8 bit | |
| Interface Type | Parallel | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 45ns | |
| Mounting Type | Surface Mount | |
| Package Type | TSOP | |
| Pin Count | 44 | |
| Dimensions | 18.51 x 10.26 x 1.04mm | |
| Length | 18.51mm | |
| Width | 10.26mm | |
| Height | 1.04mm | |
| Maximum Operating Supply Voltage | 3.6 V | |
| Maximum Operating Temperature | +85 °C | |
| Number of Words | 512K | |
| Number of Bits per Word | 8bit | |
| Minimum Operating Temperature | -40 °C | |
| Minimum Operating Supply Voltage | 2.7 V | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Memory Size 4Mbit | ||
Organisation 512K x 8 bit | ||
Interface Type Parallel | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 45ns | ||
Mounting Type Surface Mount | ||
Package Type TSOP | ||
Pin Count 44 | ||
Dimensions 18.51 x 10.26 x 1.04mm | ||
Length 18.51mm | ||
Width 10.26mm | ||
Height 1.04mm | ||
Maximum Operating Supply Voltage 3.6 V | ||
Maximum Operating Temperature +85 °C | ||
Number of Words 512K | ||
Number of Bits per Word 8bit | ||
Minimum Operating Temperature -40 °C | ||
Minimum Operating Supply Voltage 2.7 V | ||
The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a non-volatile element in each memory cell. The memory is organized as 512K bytes of 8 bits each or 256K words of 16-bits each. The embedded non-volatile elements incorporate QuantumTrap technology, producing reliable non-volatile memory. The SRAM provides infinite read and write cycles, while independent non-volatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the non-volatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the non-volatile memory. Both the STORE and RECALL operations are also available under software control.
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