onsemi PowerTrench Type P-Channel MOSFET, 3.5 A, 20 V Enhancement, 8-Pin SOIC FDS9431A

Offre groupée disponible

Sous-total (1 paquet de 25 unités)*

13,90 €

(TVA exclue)

16,825 €

(TVA incluse)

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Unité
Prix par unité
le paquet*
25 - 750,556 €13,90 €
100 - 2250,479 €11,98 €
250 +0,415 €10,38 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
917-5507
Référence fabricant:
FDS9431A
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

3.5A

Maximum Drain Source Voltage Vds

20V

Package Type

SOIC

Series

PowerTrench

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

130mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.5W

Maximum Gate Source Voltage Vgs

8 V

Typical Gate Charge Qg @ Vgs

6nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

4 mm

Length

5mm

Height

1.5mm

Automotive Standard

No

Enhancement Mode P-Channel MOSFET, ON Semiconductor


ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:


• Voltage controlled P-Channel small signal switch

• High-Density cell design

• High saturation current

• Superior switching

• Great rugged and reliable performance

• DMOS technology

Applications:


• Load Switching

• DC/DC converter

• Battery protection

• Power management control

• DC motor control

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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