IXYS HiperFET, X2-Class Type N-Channel MOSFET, 100 A, 650 V Enhancement, 3-Pin TO-264 IXFK100N65X2
- N° de stock RS:
- 917-1429
- Numéro d'article Distrelec:
- 302-53-341
- Référence fabricant:
- IXFK100N65X2
- Fabricant:
- IXYS
Offre groupée disponible
Sous-total (1 unité)*
14,87 €
(TVA exclue)
17,99 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- 193 unité(s) expédiée(s) à partir du 23 février 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 1 | 14,87 € |
| 2 - 4 | 14,11 € |
| 5 - 9 | 13,40 € |
| 10 + | 13,09 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 917-1429
- Numéro d'article Distrelec:
- 302-53-341
- Référence fabricant:
- IXFK100N65X2
- Fabricant:
- IXYS
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | IXYS | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-264 | |
| Series | HiperFET, X2-Class | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 30mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 183nC | |
| Forward Voltage Vf | 1.4V | |
| Maximum Power Dissipation Pd | 1.04kW | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 26.3 mm | |
| Standards/Approvals | No | |
| Length | 20.3mm | |
| Height | 5.3mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque IXYS | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-264 | ||
Series HiperFET, X2-Class | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 30mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 183nC | ||
Forward Voltage Vf 1.4V | ||
Maximum Power Dissipation Pd 1.04kW | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 26.3 mm | ||
Standards/Approvals No | ||
Length 20.3mm | ||
Height 5.3mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiPerFET™ X2 Series
The IXYS X2 class HiPerFET Power MOSFET series offers significantly reduced on resistance and gate charge when compared to earlier generations of power MOSFETs resulting in reduced losses and higher operational efficiency. These rugged devices incorporate an enhanced high-speed intrinsic diode and are suitable for both hard switching and resonant mode applications. X2 class Power MOSFETs are available in a variety of industry-standard packages including isolated types, with ratings of up to 120A at 650V. Typical applications include DC-DC converters, AC and DC motor drives, switch-mode and resonant-mode power supplies, DC Choppers, Solar inverters, temperature and lighting control.
Very low RDS(on) and QG (gate charge)
Fast intrinsic rectifier diode
Low intrinsic gate resistance
Low package inductance
Industry standard packages
MOSFET Transistors, IXYS
A wide range of Advanced discrete Power MOSFET devices from IXYS
Liens connexes
- IXYS Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-264
- IXYS X2-Class Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-264
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- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-264
- IXYS Type N-Channel MOSFET 1 kV Enhancement, 3-Pin TO-264