Infineon HEXFET Type N-Channel MOSFET, 9.3 A, 80 V Enhancement, 8-Pin SOIC IRF7493TRPBF

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7,94 €

(TVA exclue)

9,61 €

(TVA incluse)

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le paquet*
10 +0,794 €7,94 €

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N° de stock RS:
915-4960
Référence fabricant:
IRF7493TRPBF
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9.3A

Maximum Drain Source Voltage Vds

80V

Package Type

SOIC

Series

HEXFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

15mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2.5W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

35nC

Forward Voltage Vf

1.3V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

1.5mm

Standards/Approvals

No

Length

5mm

Width

4 mm

Automotive Standard

No

N-Channel Power MOSFET 60V to 80V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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