onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 3 A, 20 V Enhancement, 6-Pin SSOT FDC6420C

N° de stock RS:: 903-4147
Référence fabricant:: FDC6420C
Fabricant:: onsemi

onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 3 A, 20 V Enhancement, 6-Pin SSOT FDC6420C

Offre groupée disponible

Sous-total (1 paquet de 25 unités)*

14,10 €

(TVA exclue)

17,05 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 75,00 €

En stock

2 225 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	le paquet*
25 - 75	0,564 €	14,10 €
100 - 475	0,421 €	10,53 €
500 - 975	0,336 €	8,40 €
1000 - 2975	0,278 €	6,95 €
3000 +	0,226 €	5,65 €

*Prix donné à titre indicatif

N° de stock RS:: 903-4147
Référence fabricant:: FDC6420C
Fabricant:: onsemi

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	onsemi
	Channel Type	Type P, Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	3A
	Maximum Drain Source Voltage Vds	20V
	Series	PowerTrench
	Package Type	SSOT
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	190mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	0.7V
	Typical Gate Charge Qg @ Vgs	3.3nC
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	12 V
	Maximum Power Dissipation Pd	960mW
	Transistor Configuration	Isolated
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	3mm
	Width	1.7 mm
	Height	1mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Sélectionner tout
	Marque onsemi
	Channel Type Type P, Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 3A
	Maximum Drain Source Voltage Vds 20V
	Series PowerTrench
	Package Type SSOT
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 190mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 0.7V
	Typical Gate Charge Qg @ Vgs 3.3nC
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 12 V
	Maximum Power Dissipation Pd 960mW
	Transistor Configuration Isolated
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 3mm
	Width 1.7 mm
	Height 1mm
	Number of Elements per Chip 2
	Automotive Standard No

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated PowerTrench 2 Type P, Type N-Channel MOSFET, 3 A, 20 V Enhancement, 6-Pin SSOT FDC6420C

Frais de livraison offerts pour toute commande de plus de 75,00 €

PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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