N-Channel MOSFET, 24 A, 650 V, 3-Pin D2PAK STMicroelectronics STB33N65M2
- N° de stock RS:
- 876-5626P
- Référence fabricant:
- STB33N65M2
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total 50 unités (conditionné en bande continue)*
99,70 €
(TVA exclue)
120,65 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité |
|---|---|
| 50 - 95 | 1,994 € |
| 100 + | 1,72 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 876-5626P
- Référence fabricant:
- STB33N65M2
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 24 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 140 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 190 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.4mm | |
| Typical Gate Charge @ Vgs | 41.5 nC @ 10 V | |
| Transistor Material | Si | |
| Width | 9.35mm | |
| Number of Elements per Chip | 1 | |
| Series | MDmesh M2 | |
| Height | 4.6mm | |
| Forward Diode Voltage | 1.6V | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 24 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 140 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 190 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Maximum Operating Temperature +150 °C | ||
Length 10.4mm | ||
Typical Gate Charge @ Vgs 41.5 nC @ 10 V | ||
Transistor Material Si | ||
Width 9.35mm | ||
Number of Elements per Chip 1 | ||
Series MDmesh M2 | ||
Height 4.6mm | ||
Forward Diode Voltage 1.6V | ||
- Pays d'origine :
- CN