Infineon CoolMOS C6 N-Channel MOSFET, 20 A, 700 V, 3-Pin I2PAK IPI65R190C6XKSA1
- N° de stock RS:
- 857-6713
- Référence fabricant:
- IPI65R190C6XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 500 unités)*
830,00 €
(TVA exclue)
1 005,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Informations sur le stock actuellement non accessibles
Unité | Prix par unité | le tube* |
|---|---|---|
| 500 - 500 | 1,66 € | 830,00 € |
| 1000 - 2000 | 1,617 € | 808,50 € |
| 2500 + | 1,577 € | 788,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 857-6713
- Référence fabricant:
- IPI65R190C6XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 700 V | |
| Package Type | I2PAK (TO-262) | |
| Series | CoolMOS C6 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 151 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 4.57mm | |
| Typical Gate Charge @ Vgs | 73 nC @ 10 V | |
| Transistor Material | Si | |
| Length | 10.36mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Height | 9.45mm | |
| Minimum Operating Temperature | -55 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 700 V | ||
Package Type I2PAK (TO-262) | ||
Series CoolMOS C6 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 151 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 4.57mm | ||
Typical Gate Charge @ Vgs 73 nC @ 10 V | ||
Transistor Material Si | ||
Length 10.36mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Height 9.45mm | ||
Minimum Operating Temperature -55 °C | ||
Infineon CoolMOS™C6/C7 Power MOSFET
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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