N-Channel MOSFET, 21 A, 650 V, 3-Pin TO-247 STMicroelectronics STW26NM60ND
- N° de stock RS:
- 829-1497P
- Référence fabricant:
- STW26NM60ND
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total 20 unités (conditionné en tube)*
47,80 €
(TVA exclue)
57,80 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité |
|---|---|
| 20 - 38 | 2,39 € |
| 40 + | 2,12 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 829-1497P
- Référence fabricant:
- STW26NM60ND
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 21 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 175 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 190 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Length | 15.75mm | |
| Typical Gate Charge @ Vgs | 54.6 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Width | 5.15mm | |
| Transistor Material | Si | |
| Height | 20.15mm | |
| Series | FDmesh | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 21 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 175 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 190 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Length 15.75mm | ||
Typical Gate Charge @ Vgs 54.6 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Width 5.15mm | ||
Transistor Material Si | ||
Height 20.15mm | ||
Series FDmesh | ||
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