Infineon OptiMOS P Type P-Channel MOSFET, 80 A, 40 V Enhancement, 3-Pin TO-263 IPB80P04P407ATMA1

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Sous-total (1 paquet de 25 unités)*

38,475 €

(TVA exclue)

46,55 €

(TVA incluse)

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Unité
Prix par unité
le paquet*
25 - 251,539 €38,48 €
50 - 1001,462 €36,55 €
125 - 2251,40 €35,00 €
250 - 4751,339 €33,48 €
500 +1,246 €31,15 €

*Prix donné à titre indicatif

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N° de stock RS:
826-9487
Référence fabricant:
IPB80P04P407ATMA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

80A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-263

Series

OptiMOS P

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

7.7mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

88W

Typical Gate Charge Qg @ Vgs

68nC

Forward Voltage Vf

-1V

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

9.25 mm

Length

10mm

Height

4.4mm

Automotive Standard

AEC-Q101

Statut RoHS non applicable

Infineon OptiMOS™P P-Channel Power MOSFETs


The Infineon OptiMOS™ P-Channel power MOSFETs are designed to give enhanced features meeting quality performances. Features include ultra-low switching loss, on-state resistance, Avalanche ratings as well as being AEC qualified for automotive solutions. Applications include dc-dc, motor control, automotive and eMobility.

Enhancement mode

Avalanche rated

Low switching and conduction power losses

Pb-free lead plating; RoHS compliant

Standard packages

OptiMOS™ P-Channel Series: Temperature range from -55°C to +175°C

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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