Infineon OptiMOS-T Type N-Channel MOSFET, 17 A, 250 V Enhancement, 3-Pin TO-263 IPB17N25S3100ATMA1
- N° de stock RS:
- 826-9002
- Référence fabricant:
- IPB17N25S3100ATMA1
- Fabricant:
- Infineon
Sous-total (1 paquet de 20 unités)*
39,12 €
(TVA exclue)
47,34 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
- Plus 780 unité(s) expédiée(s) à partir du 10 août 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 20 + | 1,956 € | 39,12 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 826-9002
- Référence fabricant:
- IPB17N25S3100ATMA1
- Fabricant:
- Infineon
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 17A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | OptiMOS-T | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 107W | |
| Typical Gate Charge Qg @ Vgs | 14nC | |
| Forward Voltage Vf | 0.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10mm | |
| Height | 4.4mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 17A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series OptiMOS-T | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 107W | ||
Typical Gate Charge Qg @ Vgs 14nC | ||
Forward Voltage Vf 0.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10mm | ||
Height 4.4mm | ||
Automotive Standard AEC-Q101 | ||
Statut RoHS non applicable
Infineon OptiMOS-T Series MOSFET, 250V Maximum Drain Source Voltage, 17A Maximum Continuous Drain Current - IPB17N25S3100ATMA1
Features and Benefits:
• 17A continuous drain current supporting substantial load currents
• 100 mΩ maximum RDS(on) reducing conduction losses in power stages
• 14 nC typical gate charge for efficient switching control
• 0.9V forward voltage lowering diode conduction drop
• 107W maximum power dissipation permitting high‑power operation
Applications
• Ideal for motor‑drive half‑bridges in automotive electronics
• Used with power‑management modules in industrial supplies
• Can be used for switch‑mode power supply primary switches
What gate‑drive considerations should I make for switching performance?
How does the thermal environment affect continuous current capability?
What protection limits apply to the devices gate?
How tolerant is the device to cold starts and high‑temperature operation?
Liens connexes
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- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263 IPB200N25N3GATMA1
- Infineon OptiMOS 3 Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263 IPB600N25N3GATMA1
- Infineon OptiMOS-T Type N-Channel MOSFET 40 V Enhancement, 7-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET 40 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263
