Infineon OptiMOS-T Type N-Channel MOSFET, 17 A, 250 V Enhancement, 3-Pin TO-263 IPB17N25S3100ATMA1

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39,12 €

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47,34 €

(TVA incluse)

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N° de stock RS:
826-9002
Référence fabricant:
IPB17N25S3100ATMA1
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

17A

Maximum Drain Source Voltage Vds

250V

Package Type

TO-263

Series

OptiMOS-T

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

100mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

107W

Typical Gate Charge Qg @ Vgs

14nC

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10mm

Height

4.4mm

Automotive Standard

AEC-Q101

Statut RoHS non applicable

Infineon OptiMOS-T Series MOSFET, 250V Maximum Drain Source Voltage, 17A Maximum Continuous Drain Current - IPB17N25S3100ATMA1


This MOSFET is a surface‑mount N‑channel enhancement device designed for high‑voltage switching in automotive and industrial power systems. It operates across a wide temperature range and is intended for applications requiring robust thermal endurance and controlled switching performance without detailing its mechanical package or pin count.

Features and Benefits:


• 250V drain rating enabling high‑voltage switching capability
• 17A continuous drain current supporting substantial load currents
• 100 mΩ maximum RDS(on) reducing conduction losses in power stages
• 14 nC typical gate charge for efficient switching control
• 0.9V forward voltage lowering diode conduction drop
• 107W maximum power dissipation permitting high‑power operation

Applications


• Suitable for high‑voltage DC-DC converters in vehicles
• Ideal for motor‑drive half‑bridges in automotive electronics
• Used with power‑management modules in industrial supplies
• Can be used for switch‑mode power supply primary switches

What gate‑drive considerations should I make for switching performance?


Use a driver capable of delivering the gate charge within your targeted switching interval

the typical 14 nC charge lets you estimate peak gate current and switching losses for the chosen drive voltage.

How does the thermal environment affect continuous current capability?


The device’s 107W dissipation rating requires adequate PCB thermal design and heat‑sinking to maintain safe junction temperatures when carrying the specified 17A continuous current.

What protection limits apply to the device’s gate?


Ensure gate voltage remains within ±20V to avoid overstressing the gate oxide and consider transient suppression if exposed to inductive switching spikes.

How tolerant is the device to cold starts and high‑temperature operation?


It is specified to operate from low automotive temperatures up to elevated conditions, aiding use in systems experiencing broad ambient temperature swings.

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