onsemi QFET Type P-Channel MOSFET, 10.5 A, 250 V Enhancement, 3-Pin TO-3PN

Voir l’ensemble des MOSFETs
Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
808-8991
Référence fabricant:
FQA9P25
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

10.5A

Maximum Drain Source Voltage Vds

250V

Series

QFET

Package Type

TO-3PN

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.62Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

150W

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

29nC

Forward Voltage Vf

5V

Maximum Operating Temperature

150°C

Length

15.8mm

Standards/Approvals

No

Width

5 mm

Height

20.1mm

Automotive Standard

No

QFET® P-Channel MOSFET, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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