onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 830 mA, 20 V Enhancement, 6-Pin SC-89 FDY1002PZ

N° de stock RS:: 807-0713
Référence fabricant:: FDY1002PZ
Fabricant:: onsemi

onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 830 mA, 20 V Enhancement, 6-Pin SC-89 FDY1002PZ

Offre groupée disponible

Sous-total (1 paquet de 25 unités)*

9,125 €

(TVA exclue)

11,05 €

(TVA incluse)

Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard

Unité	Prix par unité	le paquet*
25 - 75	0,365 €	9,13 €
100 - 225	0,314 €	7,85 €
250 - 475	0,273 €	6,83 €
500 - 975	0,24 €	6,00 €
1000 +	0,218 €	5,45 €

*Prix donné à titre indicatif

N° de stock RS:: 807-0713
Référence fabricant:: FDY1002PZ
Fabricant:: onsemi

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Documentation technique

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	830mA
	Maximum Drain Source Voltage Vds	20V
	Series	PowerTrench
	Package Type	SC-89
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	1.8Ω
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	2.2nC
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1V
	Maximum Power Dissipation Pd	625mW
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Height	0.6mm
	Width	1.2 mm
	Length	1.7mm
	Standards/Approvals	No
	Number of Elements per Chip	2
	Automotive Standard	No

	Sélectionner tout
	Marque onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 830mA
	Maximum Drain Source Voltage Vds 20V
	Series PowerTrench
	Package Type SC-89
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 1.8Ω
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 2.2nC
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1V
	Maximum Power Dissipation Pd 625mW
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Height 0.6mm
	Width 1.2 mm
	Length 1.7mm
	Standards/Approvals No
	Number of Elements per Chip 2
	Automotive Standard No

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 830 mA, 20 V Enhancement, 6-Pin SC-89 FDY1002PZ

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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