onsemi PowerTrench N-Channel MOSFET, 7.5 A, 100 V Enhancement, 8-Pin WDFN FDMC86116LZ
- N° de stock RS:
- 806-3501
- Référence fabricant:
- FDMC86116LZ
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 ruban de 10 unités)*
8,76 €
(TVA exclue)
10,60 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 140 unité(s) expédiée(s) à partir du 30 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le ruban* |
|---|---|---|
| 10 - 90 | 0,876 € | 8,76 € |
| 100 - 240 | 0,756 € | 7,56 € |
| 250 - 490 | 0,654 € | 6,54 € |
| 500 - 990 | 0,575 € | 5,75 € |
| 1000 + | 0,524 € | 5,24 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 806-3501
- Référence fabricant:
- FDMC86116LZ
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 7.5A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | WDFN | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 178mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 19W | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.3mm | |
| Standards/Approvals | No | |
| Length | 3.3mm | |
| Height | 750μm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 7.5A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type WDFN | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 178mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 19W | ||
Maximum Operating Temperature 150°C | ||
Width 3.3mm | ||
Standards/Approvals No | ||
Length 3.3mm | ||
Height 750μm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
- onsemi PowerTrench N-Channel MOSFET 100 V Enhancement, 8-Pin WDFN FDMC86116LZ
- onsemi PowerTrench N-Channel MOSFET 100 V Enhancement, 8-Pin WDFN
- onsemi PowerTrench N-Channel MOSFET 100 V Enhancement, 8-Pin WDFN FDMS86101
- onsemi PowerTrench N-Channel MOSFET 100 V Enhancement, 8-Pin WDFN FDMC86102LZ
- onsemi PowerTrench N-Channel MOSFET 100 V Enhancement, 8-Pin WDFN FDMS86104
- onsemi PowerTrench N-Channel MOSFET 30 V Enhancement, 8-Pin WDFN FDMC7660
- onsemi PowerTrench N-Channel MOSFET 80 V Enhancement, 8-Pin WDFN
- onsemi PowerTrench N-Channel MOSFET 150 V Enhancement, 8-Pin WDFN