onsemi UniFET Type N-Channel MOSFET, 44 A, 500 V Enhancement, 3-Pin TO-247 FDH44N50
- N° de stock RS:
- 806-3438
- Référence fabricant:
- FDH44N50
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 unité)*
9,60 €
(TVA exclue)
11,62 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 10 unité(s) expédiée(s) à partir du 13 avril 2026
- Plus 106 unité(s) expédiée(s) à partir du 20 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 9,60 € |
| 10 + | 8,28 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 806-3438
- Référence fabricant:
- FDH44N50
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 44A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Package Type | TO-247 | |
| Series | UniFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 750W | |
| Typical Gate Charge Qg @ Vgs | 90nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Standards/Approvals | No | |
| Height | 20.82mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 44A | ||
Maximum Drain Source Voltage Vds 500V | ||
Package Type TO-247 | ||
Series UniFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 750W | ||
Typical Gate Charge Qg @ Vgs 90nC | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Standards/Approvals No | ||
Height 20.82mm | ||
Automotive Standard No | ||
UniFET™ N-Channel MOSFET, Fairchild Semiconductor
UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.
UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
- onsemi UniFET Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- onsemi UniFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263
- onsemi UniFET Type N-Channel MOSFET 250 V Enhancement, 3-Pin TO-263 FDB44N25TM
- onsemi UniFET Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-264
- onsemi UniFET Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-263
- onsemi UniFET Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- onsemi UniFET Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220
- onsemi UniFET Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-220F