N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

N° de stock RS:: 802-4357P
Référence fabricant:: IXFB210N30P3
Fabricant:: IXYS

N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

71 En stock pour livraison sous 4 jour(s)

Prix l'unité (conditionné en tube)

25,34 €

(TVA exclue)

30,66 €

(TVA incluse)

Unité	Prix par unité
13 +	25,34 €

N° de stock RS:: 802-4357P
Référence fabricant:: IXFB210N30P3
Fabricant:: IXYS

IXFB210N30P3, Polar3 HiPerFET, Power MOSFETs, N-Channel Enhancement Mode, Avalanche Rated, Fast Intrinsic Rectifier
ESD Control Selection Guide V1

Attribut	Valeur
Channel Type	N
Maximum Continuous Drain Current	210 A
Maximum Drain Source Voltage	300 V
Package Type	PLUS264
Series	HiperFET, Polar3
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	14.5 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Maximum Power Dissipation	1.89 kW
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Transistor Material	Si
Typical Gate Charge @ Vgs	268 nC @ 10 V
Length	20.29mm
Width	5.31mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	26.59mm

N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3

N-channel Power MOSFET, IXYS HiperFET™ Polar3™ Series