Références fabricant

onsemi Dual N/P-Channel MOSFET, 1.5 A, 2 A, 20 V, 6-Pin MCPH MCH6660-TL-H

N° de stock RS:: 791-9493
Référence fabricant:: MCH6660-TL-H
Fabricant:: onsemi

onsemi Dual N/P-Channel MOSFET, 1.5 A, 2 A, 20 V, 6-Pin MCPH MCH6660-TL-H

Offre groupée disponible

Sous-total (1 ruban de 20 unités)*

7,44 €

(TVA exclue)

9,00 €

(TVA incluse)

Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard

Unité	Prix par unité	le ruban*
20 - 20	0,372 €	7,44 €
40 - 180	0,306 €	6,12 €
200 - 380	0,29 €	5,80 €
400 - 780	0,274 €	5,48 €
800 +	0,258 €	5,16 €

*Prix donné à titre indicatif

N° de stock RS:: 791-9493
Référence fabricant:: MCH6660-TL-H
Fabricant:: onsemi

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	onsemi
	Channel Type	N, P
	Maximum Continuous Drain Current	1.5 A, 2 A
	Maximum Drain Source Voltage	20 V
	Package Type	MCPH
	Mounting Type	Surface Mount
	Pin Count	6
	Maximum Drain Source Resistance	136 mΩ, 266 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	1.3V
	Maximum Power Dissipation	800 mW
	Transistor Configuration	Isolated
	Maximum Gate Source Voltage	-10 V, +10 V
	Number of Elements per Chip	2
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	1.7 nC @ 4.5 V, 1.8 nC @ 4.5 V
	Width	1.6mm
	Length	2mm
	Height	0.85mm

	Sélectionner tout
	Marque onsemi
	Channel Type N, P
	Maximum Continuous Drain Current 1.5 A, 2 A
	Maximum Drain Source Voltage 20 V
	Package Type MCPH
	Mounting Type Surface Mount
	Pin Count 6
	Maximum Drain Source Resistance 136 mΩ, 266 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 1.3V
	Maximum Power Dissipation 800 mW
	Transistor Configuration Isolated
	Maximum Gate Source Voltage -10 V, +10 V
	Number of Elements per Chip 2
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 1.7 nC @ 4.5 V, 1.8 nC @ 4.5 V
	Width 1.6mm
	Length 2mm
	Height 0.85mm

Datasheet

Dual N/P-Channel MOSFET, ON Semiconductor

The NTJD1155L is a dual channel MOSFET. Featuring both P and N-channel’s into a single package, this MOSFET is brilliant for low control signal, low battery voltages and high load currents. The N-channel features internal ESD protection and can be driven by logic signals as low as 1.5V, while the P-Channel is designed to be used on load switching applications. The P-channel also designed with ON semi’s trench technology.

MOSFET Transistors, ON Semiconductor

onsemi Dual N/P-Channel MOSFET, 1.5 A, 2 A, 20 V, 6-Pin MCPH MCH6660-TL-H

Dual N/P-Channel MOSFET, ON Semiconductor

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