STMicroelectronics MDmesh M2 Type N-Channel MOSFET, 4.5 A, 650 V Enhancement, 3-Pin TO-252 STD6N60M2
- N° de stock RS:
- 786-3615
- Référence fabricant:
- STD6N60M2
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
8,88 €
(TVA exclue)
10,745 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 11 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 20 | 1,776 € | 8,88 € |
| 25 - 45 | 1,688 € | 8,44 € |
| 50 - 120 | 1,52 € | 7,60 € |
| 125 - 245 | 1,368 € | 6,84 € |
| 250 + | 1,298 € | 6,49 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 786-3615
- Référence fabricant:
- STD6N60M2
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.5A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Series | MDmesh M2 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 60W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 6.2 mm | |
| Height | 2.4mm | |
| Length | 6.6mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.5A | ||
Maximum Drain Source Voltage Vds 650V | ||
Series MDmesh M2 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 60W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 6.2 mm | ||
Height 2.4mm | ||
Length 6.6mm | ||
Automotive Standard No | ||
N-channel MDmesh™ M2 Series, STMicroelectronics
A range of high-voltage power MOSFETs from STMicroelecronics. With their low gate charge and excellent output capacitance characteristics, the MDmesh M2 series are perfect for use in resonant-type switching supplies (LLC converters).
MOSFET Transistors, STMicroelectronics
Liens connexes
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 STD9N60M2
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-252 STD13N65M2
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-252 STD16N60M2
- STMicroelectronics MDmesh M2 Type N-Channel MOSFET 650 V Enhancement, 3-Pin TO-247