onsemi Series PowerTrench 2 Type N-Channel MOSFET, 26 A, 30 V Enhancement, 8-Pin WDFN FDPC8013S

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Sous-total (1 paquet de 2 unités)*

4,78 €

(TVA exclue)

5,78 €

(TVA incluse)

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  • Expédition à partir du 12 août 2026
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Unité
Prix par unité
le paquet*
2 - 182,39 €4,78 €
20 - 1982,06 €4,12 €
200 - 9981,78 €3,56 €
1000 - 19981,565 €3,13 €
2000 +1,43 €2,86 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
774-1180
Référence fabricant:
FDPC8013S
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

26A

Maximum Drain Source Voltage Vds

30V

Package Type

WDFN

Series

PowerTrench

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

9.2mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

13nC

Maximum Power Dissipation Pd

2W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.8V

Maximum Operating Temperature

150°C

Transistor Configuration

Series

Length

3.4mm

Height

0.75mm

Width

3.4 mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

Pays d'origine :
MY

PowerTrench® Dual N-Channel MOSFET, Fairchild Semiconductor


ON Semis PowerTrench® MOSFETS are optimised power switched that offer increased system efficiency and power density. They combine small gate charge, small reverse recovery and a soft reverse recovery body diode to contribute to fast switching of synchronous rectification in AC/DC power supplies.

The soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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