Renesas N-Channel MOSFET, 12 A, 60 V, 4-Pin SC-62 RQK0609CQDQS#H3
- N° de stock RS:
- 772-6601P
- Référence fabricant:
- RQK0609CQDQS#H3
- Fabricant:
- Renesas Electronics
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 772-6601P
- Référence fabricant:
- RQK0609CQDQS#H3
- Fabricant:
- Renesas Electronics
Spécifications
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Renesas Electronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SC-62 | |
| Mounting Type | Surface Mount | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance | 125 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.4V | |
| Maximum Power Dissipation | 1.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Width | 2.5mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 5 nC @ 4.5 V | |
| Length | 4.5mm | |
| Transistor Material | Si | |
| Height | 1.5mm | |
| Sélectionner tout | ||
|---|---|---|
Marque Renesas Electronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SC-62 | ||
Mounting Type Surface Mount | ||
Pin Count 4 | ||
Maximum Drain Source Resistance 125 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.4V | ||
Maximum Power Dissipation 1.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Width 2.5mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 5 nC @ 4.5 V | ||
Length 4.5mm | ||
Transistor Material Si | ||
Height 1.5mm | ||
- Pays d'origine :
- JP