onsemi PowerTrench Type P-Channel MOSFET, 4.5 A, 20 V Enhancement, 6-Pin SOT-23 FDC638P

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Sous-total (1 ruban de 10 unités)*

3,71 €

(TVA exclue)

4,49 €

(TVA incluse)

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Prix par unité
le ruban*
10 +0,371 €3,71 €

*Prix donné à titre indicatif

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N° de stock RS:
761-4413
Référence fabricant:
FDC638P
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

4.5A

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-23

Series

PowerTrench

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

72mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

8 V

Typical Gate Charge Qg @ Vgs

10nC

Maximum Power Dissipation Pd

1.6W

Forward Voltage Vf

-1.2V

Maximum Operating Temperature

150°C

Width

1.7 mm

Height

1mm

Length

3mm

Standards/Approvals

No

Automotive Standard

No

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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