STMicroelectronics MDmesh M5 Type N-Channel MOSFET, 12 A, 650 V Enhancement, 3-Pin TO-252
- N° de stock RS:
- 761-0689P
- Référence fabricant:
- STD16N65M5
- Fabricant:
- STMicroelectronics
Sous-total 1 unité (conditionné en bande continue)*
2,59 €
(TVA exclue)
3,13 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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Unité | Prix par unité |
|---|---|
| 1 + | 2,59 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 761-0689P
- Référence fabricant:
- STD16N65M5
- Fabricant:
- STMicroelectronics
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-252 | |
| Series | MDmesh M5 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 279mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 90W | |
| Typical Gate Charge Qg @ Vgs | 31nC | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.6mm | |
| Standards/Approvals | No | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-252 | ||
Series MDmesh M5 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 279mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 90W | ||
Typical Gate Charge Qg @ Vgs 31nC | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Length 6.6mm | ||
Standards/Approvals No | ||
Height 2.4mm | ||
Automotive Standard No | ||
N-channel MDmesh™ M5 Series, STMicroelectronics
The MDmesh M5 power MOSFETs are optimised for high-power PFC and PWM topologies. Main features include a low on-state losses per silicon area combined with low gate charge. They are designed for energy-conscious, Compact and reliable hard switching applications, such as solar power converters, power supplies for consumer products and electronic lighting controls.