onsemi PowerTrench Type N-Channel MOSFET, 122 A, 80 V Enhancement, 8-Pin WDFN FDMS86300
- N° de stock RS:
- 759-9633
- Référence fabricant:
- FDMS86300
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
4,60 €
(TVA exclue)
5,56 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 3 252 unité(s) expédiée(s) à partir du 31 août 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 2,30 € | 4,60 € |
| 20 - 198 | 1,98 € | 3,96 € |
| 200 - 998 | 1,715 € | 3,43 € |
| 1000 - 1998 | 1,51 € | 3,02 € |
| 2000 + | 1,375 € | 2,75 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 759-9633
- Référence fabricant:
- FDMS86300
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 122A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | WDFN | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.8mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Maximum Power Dissipation Pd | 104W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.05mm | |
| Length | 5mm | |
| Width | 6mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 122A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type WDFN | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.8mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Maximum Power Dissipation Pd 104W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.05mm | ||
Length 5mm | ||
Width 6mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, over 60A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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