onsemi PowerTrench Type P-Channel MOSFET, 4.9 A, 30 V Enhancement, 6-Pin SOT-23 FDC610PZ

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Offre groupée disponible

Sous-total (1 ruban de 20 unités)*

6,86 €

(TVA exclue)

8,30 €

(TVA incluse)

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  • 2 520 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité
Prix par unité
le ruban*
20 - 1800,343 €6,86 €
200 - 4800,295 €5,90 €
500 - 9800,256 €5,12 €
1000 - 19800,225 €4,50 €
2000 +0,205 €4,10 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
759-9046
Référence fabricant:
FDC610PZ
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

4.9A

Maximum Drain Source Voltage Vds

30V

Series

PowerTrench

Package Type

SOT-23

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

75mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

17nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

-1.2V

Maximum Power Dissipation Pd

1.6W

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

150°C

Width

1.7 mm

Standards/Approvals

No

Length

3mm

Height

1mm

Automotive Standard

No

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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