Infineon SIPMOS Type P-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-263
- N° de stock RS:
- 753-3166P
- Référence fabricant:
- SPB80P06PGATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total 10 unités (conditionné en bande continue)*
61,70 €
(TVA exclue)
74,70 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 16 unité(s) expédiée(s) à partir du 07 septembre 2026
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Unité | Prix par unité |
|---|---|
| 10 - 24 | 6,17 € |
| 25 + | 5,77 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 753-3166P
- Référence fabricant:
- SPB80P06PGATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-263 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 115nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 340W | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.31mm | |
| Standards/Approvals | No | |
| Height | 4.57mm | |
| Width | 9.45mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-263 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 115nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 340W | ||
Maximum Operating Temperature 175°C | ||
Length 10.31mm | ||
Standards/Approvals No | ||
Height 4.57mm | ||
Width 9.45mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 60V Drain Source Voltage, 80A Continuous Drain Current - SPB80P06PGATMA1
This MOSFET is a P‑channel enhancement device designed for high-current switching in automotive and industrial contexts. It operates across a wide temperature span suitable for demanding environments and fits as a surface-mount power transistor in compact assemblies. The device supports heavy continuous drain currents and is intended for applications requiring robust power handling and thermal endurance.
Features and Benefits:
• 80A continuous drain current improves high-load handling
• 60V drain‑source rating permits medium-voltage system use
• 23mΩ low Rds(ON) reduces conduction losses
• 340W maximum power dissipation supports sustained power delivery
• 115nC gate charge enables predictable switching energy management
• Rated for -55°C to175°C operation extends thermal margin
• 60V drain‑source rating permits medium-voltage system use
• 23mΩ low Rds(ON) reduces conduction losses
• 340W maximum power dissipation supports sustained power delivery
• 115nC gate charge enables predictable switching energy management
• Rated for -55°C to175°C operation extends thermal margin
Applications
• Used for half‑bridge and synchronous rectifier stages
• Suitable for automotive power distribution modules
• Ideal for motor drive switching elements
• Can be used for DC‑DC converter output stages
• Used with in-vehicle electronic control units
• Suitable for automotive power distribution modules
• Ideal for motor drive switching elements
• Can be used for DC‑DC converter output stages
• Used with in-vehicle electronic control units
What package does it come in and how is it mounted?
It is supplied in a TO‑263 package intended for surface mounting to support thermal transfer to the PCB.
What gate voltage limits must be observed during design?
The maximum gate‑source voltage is 20V so gate drive circuits should not exceed this level.
How many pins are available for connection and power routing?
The device provides three pins to accommodate gate, drain and source connections for standard MOSFET layouts.
Is the device specified to automotive stress standards?
It meets the AEC‑Q101 automotive qualification standard for semiconductor devices.