N-Channel MOSFET, 300 mA, 600 V, 3 + Tab-Pin SOT-223 STMicroelectronics STN1NK60Z
- N° de stock RS:
- 714-1072P
- Référence fabricant:
- STN1NK60Z
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total 100 unités (conditionné en bande continue)*
33,00 €
(TVA exclue)
40,00 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité |
|---|---|
| 100 + | 0,33 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 714-1072P
- Référence fabricant:
- STN1NK60Z
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 300 mA | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 + Tab | |
| Maximum Drain Source Resistance | 15 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 3.3 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 4.9 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Width | 3.5mm | |
| Length | 6.5mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Height | 1.8mm | |
| Series | MDmesh, SuperMESH | |
| Minimum Operating Temperature | -55 °C | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 300 mA | ||
Maximum Drain Source Voltage 600 V | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 + Tab | ||
Maximum Drain Source Resistance 15 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 3.3 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 4.9 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Width 3.5mm | ||
Length 6.5mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Height 1.8mm | ||
Series MDmesh, SuperMESH | ||
Minimum Operating Temperature -55 °C | ||