N-Channel MOSFET, 26 A, 1200 V, 3-Pin TO-264 IXYS IXFK26N120P

N° de stock RS:: 711-5360P
Référence fabricant:: IXFK26N120P
Fabricant:: IXYS

N-Channel MOSFET, 26 A, 1200 V, 3-Pin TO-264 IXYS IXFK26N120P

217 En stock pour livraison sous 4 jour(s)

Prix l'unité (conditionné en tube)

38,12 €

(TVA exclue)

46,13 €

(TVA incluse)

Unité	Prix par unité
13 +	38,12 €

N° de stock RS:: 711-5360P
Référence fabricant:: IXFK26N120P
Fabricant:: IXYS

IXFK26N120P HiPerFET Polar Power MOSFETs Data Sheet
ESD Control Selection Guide V1

Attribut	Valeur
Channel Type	N
Maximum Continuous Drain Current	26 A
Maximum Drain Source Voltage	1200 V
Package Type	TO-264
Series	HiperFET, Polar
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	460 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	6.5V
Maximum Power Dissipation	960 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Transistor Material	Si
Typical Gate Charge @ Vgs	225 nC @ 10 V
Width	5.13mm
Maximum Operating Temperature	+150 °C
Length	19.96mm
Number of Elements per Chip	1
Minimum Operating Temperature	-55 °C
Height	26.16mm

N-Channel MOSFET, 26 A, 1200 V, 3-Pin TO-264 IXYS IXFK26N120P

N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series