Vishay IRFIZ48G N-Channel Power MOSFET, 37 A, 60 V Enhancement, 3-Pin TO-220 IRFIZ48GPBF
- N° de stock RS:
- 708-4799
- Référence fabricant:
- IRFIZ48GPBF
- Fabricant:
- Vishay
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 5 unités)*
16,14 €
(TVA exclue)
19,53 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 155 unité(s) expédiée(s) à partir du 12 octobre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 3,228 € | 16,14 € |
| 50 - 120 | 2,908 € | 14,54 € |
| 125 - 245 | 2,746 € | 13,73 € |
| 250 - 495 | 2,648 € | 13,24 € |
| 500 + | 2,39 € | 11,95 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 708-4799
- Référence fabricant:
- IRFIZ48GPBF
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 37A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | TO-220 | |
| Series | IRFIZ48G | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 18mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | -20V, +20V | |
| Maximum Power Dissipation Pd | 50W | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.8mm | |
| Length | 10.3mm | |
| Standards/Approvals | No | |
| Width | 4.7mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 37A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type TO-220 | ||
Series IRFIZ48G | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 18mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs -20V, +20V | ||
Maximum Power Dissipation Pd 50W | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature 175°C | ||
Height 9.8mm | ||
Length 10.3mm | ||
Standards/Approvals No | ||
Width 4.7mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Vishay IRFIZ48G Series Power MOSFET, 60V Maximum Drain Source Voltage, 37A Maximum Continuous Drain Current - IRFIZ48GPBF
This power MOSFET is a through-hole N-channel enhancement device designed for power switching and control in electronic systems. It operates across a wide temperature span and is suited to PCB-mounted applications requiring substantial current handling and moderate voltage capability. The component is supplied in a TO-220 package for straightforward thermal interfacing and mounting.
Features and Benefits:
• 60V drain-source rating supports medium-voltage switching applications
• 37A continuous drain current enables high-current control tasks
• 18mΩ Rds(on) minimises conduction losses for efficient power transfer
• 50W power dissipation allows sustained load handling with heat-sinking
• 110nC typical gate charge enables predictable switching performance
• 20V maximum gate-source voltage provides margin for gate-drive circuits
• 37A continuous drain current enables high-current control tasks
• 18mΩ Rds(on) minimises conduction losses for efficient power transfer
• 50W power dissipation allows sustained load handling with heat-sinking
• 110nC typical gate charge enables predictable switching performance
• 20V maximum gate-source voltage provides margin for gate-drive circuits
Applications
• Suitable for motor driver stages in industrial controllers
• Used for DC-DC converters requiring through-hole power devices
• Ideal for power supplies in test and prototyping rigs
• Can be used for high-current load switching on PCBs
• Used with gate drivers for pulse-width-modulated switching
• Used for DC-DC converters requiring through-hole power devices
• Ideal for power supplies in test and prototyping rigs
• Can be used for high-current load switching on PCBs
• Used with gate drivers for pulse-width-modulated switching
What thermal range can it tolerate during operation?
It is specified for operation from -55°C up to 175°C enabling use in demanding temperature environments.
How does the gate charge affect switching design?
The 110nC gate charge determines required gate-drive current and influences switching transition losses and driver selection.
What mounting and assembly considerations are there?
The TO-220 through-hole format permits direct PCB mounting and straightforward attachment of a heatsink to manage the 50W dissipation rating.
Which electrical limit prevents exceeding gate voltage?
The maximum gate-source rating is 20V so gate-drive circuits must remain below this threshold to avoid device stress.
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