onsemi QFET Type N-Channel MOSFET, 3 A, 800 V Enhancement, 3-Pin TO-220 FQPF3N80C
- N° de stock RS:
- 671-5250
- Référence fabricant:
- FQPF3N80C
- Fabricant:
- onsemi
Sous-total (1 paquet de 5 unités)*
6,67 €
(TVA exclue)
8,07 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Pénurie d'approvisionnement
- Plus 25 unité(s) expédiée(s) à partir du 29 décembre 2025
- Plus 160 unité(s) expédiée(s) à partir du 05 janvier 2026
Notre stock actuel est limité et nos fournisseurs s'attendent à des pénuries.
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 + | 1,334 € | 6,67 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 671-5250
- Référence fabricant:
- FQPF3N80C
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | QFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.8Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.4V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 39W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 10.16mm | |
| Width | 4.7 mm | |
| Height | 9.19mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series QFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.8Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.4V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 39W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 10.16mm | ||
Width 4.7 mm | ||
Height 9.19mm | ||
Automotive Standard No | ||
QFET® N-Channel MOSFET, up to 5.9A, Fairchild Semiconductor
Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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