onsemi QFET Type N-Channel MOSFET, 20 A, 60 V Enhancement, 3-Pin TO-220 FQP20N06

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Sous-total (1 paquet de 5 unités)*

5,57 €

(TVA exclue)

6,74 €

(TVA incluse)

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Dernier stock RS
  • 5 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
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Prix par unité
le paquet*
5 +1,114 €5,57 €

*Prix donné à titre indicatif

N° de stock RS:
671-5051
Référence fabricant:
FQP20N06
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

60V

Series

QFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±25 V

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Power Dissipation Pd

53W

Typical Gate Charge Qg @ Vgs

11.5nC

Maximum Operating Temperature

175°C

Width

4.7 mm

Standards/Approvals

No

Height

9.4mm

Length

10.1mm

Automotive Standard

No

Pays d'origine :
MY

QFET® N-Channel MOSFET, 11A to 30A, Fairchild Semiconductor


Fairchild Semiconductor’s new QFET® Planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.

They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using Advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing Planar MOSFET devices.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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