onsemi UniFET Type N-Channel MOSFET, 33 A, 250 V Enhancement, 3-Pin TO-220AB FDP33N25

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Sous-total (1 paquet de 5 unités)*

7,66 €

(TVA exclue)

9,27 €

(TVA incluse)

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  • 965 unité(s) expédiée(s) à partir du 27 janvier 2026
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Unité
Prix par unité
le paquet*
5 +1,532 €7,66 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
671-4819
Référence fabricant:
FDP33N25
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

33A

Maximum Drain Source Voltage Vds

250V

Series

UniFET

Package Type

TO-220AB

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

0.094Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±30 V

Forward Voltage Vf

1.4V

Maximum Power Dissipation Pd

235W

Typical Gate Charge Qg @ Vgs

36.8nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

10.67mm

Height

9.4mm

Width

4.83 mm

Standards/Approvals

No

Automotive Standard

No

Pays d'origine :
MY

UniFET™ N-Channel MOSFET, Fairchild Semiconductor


UniFET™ MOSFET is Fairchild Semiconductor's high voltage MOSFET family. It has the smallest on-state resistance among the Planar MOSFETs, and also provides superior switching performance and higher avalanche energy strength. In addition, the internal gate-source ESD diode allows UniFET-II™ MOSFET to withstand over 2000V HBM surge stress.

UniFET™ MOSFETs are suitable for switching power converter applications, such as power factor correction (PFC), flat panel display (FPD) TV power, ATX (Advanced Technology eXtended) and electronic lamp ballasts.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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