onsemi PowerTrench Type N-Channel MOSFET, 1.4 A, 30 V Enhancement, 3-Pin SOT-23 NDS351AN
- N° de stock RS:
- 671-1080
- Référence fabricant:
- NDS351AN
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 10 unités)*
3,47 €
(TVA exclue)
4,20 €
(TVA incluse)
Ajouter 290 unités pour bénéficier d'une livraison gratuite
Dernier stock RS
- 230 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
- 130 unité(s) finale(s) expédiée(s) à partir du 24 février 2026
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 90 | 0,347 € | 3,47 € |
| 100 - 240 | 0,299 € | 2,99 € |
| 250 - 490 | 0,259 € | 2,59 € |
| 500 - 990 | 0,228 € | 2,28 € |
| 1000 + | 0,208 € | 2,08 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 671-1080
- Référence fabricant:
- NDS351AN
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.4A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PowerTrench | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 250mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Typical Gate Charge Qg @ Vgs | 1.8nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Power Dissipation Pd | 0.5W | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.94mm | |
| Width | 1.4 mm | |
| Standards/Approvals | No | |
| Length | 2.92mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.4A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PowerTrench | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 250mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Typical Gate Charge Qg @ Vgs 1.8nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Power Dissipation Pd 0.5W | ||
Maximum Operating Temperature 150°C | ||
Height 0.94mm | ||
Width 1.4 mm | ||
Standards/Approvals No | ||
Length 2.92mm | ||
Automotive Standard No | ||
PowerTrench® N-Channel MOSFET, up to 9.9A, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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