onsemi PowerTrench Type P-Channel MOSFET, 20 A, 30 V Enhancement, 8-Pin SOIC FDS6681Z

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Sous-total (1 paquet de 5 unités)*

10,38 €

(TVA exclue)

12,56 €

(TVA incluse)

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  • 50 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
  • Plus 1 890 unité(s) expédiée(s) à partir du 07 janvier 2026
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Unité
Prix par unité
le paquet*
5 - 452,076 €10,38 €
50 - 951,79 €8,95 €
100 - 4951,552 €7,76 €
500 - 9951,364 €6,82 €
1000 +1,24 €6,20 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
671-0618
Référence fabricant:
FDS6681Z
Fabricant:
onsemi
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Marque

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

20A

Maximum Drain Source Voltage Vds

30V

Series

PowerTrench

Package Type

SOIC

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

5mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

25 V

Typical Gate Charge Qg @ Vgs

185nC

Forward Voltage Vf

-1.2V

Maximum Power Dissipation Pd

2.5W

Maximum Operating Temperature

150°C

Height

1.5mm

Width

4 mm

Standards/Approvals

No

Length

5mm

Automotive Standard

No

PowerTrench® P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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