onsemi PowerTrench Type P-Channel MOSFET, 2.6 A, 12 V Enhancement, 3-Pin SOT-23 FDN306P
- N° de stock RS:
- 671-0416
- Référence fabricant:
- FDN306P
- Fabricant:
- onsemi
Offre groupée disponible
Sous-total (1 paquet de 5 unités)*
2,11 €
(TVA exclue)
2,555 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Pénurie d'approvisionnement
En raison d'un problème d'approvisionnement, le stock est attribué au fur et à mesure de sa disponibilité.
Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 - 45 | 0,422 € | 2,11 € |
| 50 - 145 | 0,402 € | 2,01 € |
| 150 - 745 | 0,338 € | 1,69 € |
| 750 - 1495 | 0,316 € | 1,58 € |
| 1500 + | 0,298 € | 1,49 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 671-0416
- Référence fabricant:
- FDN306P
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 2.6A | |
| Maximum Drain Source Voltage Vds | 12V | |
| Package Type | SOT-23 | |
| Series | PowerTrench | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Power Dissipation Pd | 500mW | |
| Forward Voltage Vf | -1.2V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Length | 2.92mm | |
| Standards/Approvals | No | |
| Height | 0.94mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 2.6A | ||
Maximum Drain Source Voltage Vds 12V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Power Dissipation Pd 500mW | ||
Forward Voltage Vf -1.2V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Length 2.92mm | ||
Standards/Approvals No | ||
Height 0.94mm | ||
Automotive Standard No | ||
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Liens connexes
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