onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 6-Pin SOT-23 FDC6312P

Voir l’ensemble des MOSFETs
Offre groupée disponible

Sous-total (1 paquet de 5 unités)*

4,36 €

(TVA exclue)

5,275 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
En stock
  • 14 555 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité
Prix par unité
le paquet*
5 - 450,872 €4,36 €
50 - 950,752 €3,76 €
100 - 4950,65 €3,25 €
500 - 9950,572 €2,86 €
1000 +0,52 €2,60 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
671-0340
Référence fabricant:
FDC6312P
Fabricant:
onsemi
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

onsemi

Channel Type

Type P

Product Type

MOSFET

Maximum Continuous Drain Current Id

2.3A

Maximum Drain Source Voltage Vds

20V

Series

PowerTrench

Package Type

SOT-23

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

115mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

8 V

Typical Gate Charge Qg @ Vgs

4.4nC

Maximum Power Dissipation Pd

960mW

Forward Voltage Vf

-0.7V

Transistor Configuration

Isolated

Maximum Operating Temperature

150°C

Width

1.7 mm

Height

1mm

Length

3mm

Standards/Approvals

No

Number of Elements per Chip

2

Automotive Standard

No

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor


PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Liens connexes