onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 6-Pin SOT-23 FDC6312P

N° de stock RS:: 671-0340
Référence fabricant:: FDC6312P
Fabricant:: onsemi

onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 6-Pin SOT-23 FDC6312P

Offre groupée disponible

Sous-total (1 paquet de 5 unités)*

4,36 €

(TVA exclue)

5,275 €

(TVA incluse)

Ajouter 120 unités pour bénéficier d'une livraison gratuite

Commandes ci-dessous 75,00 € coût (TVA exclue) 5,95 €.

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14 535 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	le paquet*
5 - 45	0,872 €	4,36 €
50 - 95	0,752 €	3,76 €
100 - 495	0,65 €	3,25 €
500 - 995	0,572 €	2,86 €
1000 +	0,52 €	2,60 €

*Prix donné à titre indicatif

N° de stock RS:: 671-0340
Référence fabricant:: FDC6312P
Fabricant:: onsemi

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	onsemi
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	2.3A
	Maximum Drain Source Voltage Vds	20V
	Package Type	SOT-23
	Series	PowerTrench
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	115mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	4.4nC
	Maximum Power Dissipation Pd	960mW
	Forward Voltage Vf	-0.7V
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Operating Temperature	150°C
	Transistor Configuration	Isolated
	Standards/Approvals	No
	Length	3mm
	Height	1mm
	Width	1.7 mm
	Number of Elements per Chip	2
	Automotive Standard	No

	Sélectionner tout
	Marque onsemi
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 2.3A
	Maximum Drain Source Voltage Vds 20V
	Package Type SOT-23
	Series PowerTrench
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 115mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 4.4nC
	Maximum Power Dissipation Pd 960mW
	Forward Voltage Vf -0.7V
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Operating Temperature 150°C
	Transistor Configuration Isolated
	Standards/Approvals No
	Length 3mm
	Height 1mm
	Width 1.7 mm
	Number of Elements per Chip 2
	Automotive Standard No

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.

The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this Advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.

Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.

ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

onsemi Isolated PowerTrench 2 Type P-Channel MOSFET, 2.3 A, 20 V Enhancement, 6-Pin SOT-23 FDC6312P

Ajouter 120 unités pour bénéficier d'une livraison gratuite

PowerTrench® Dual P-Channel MOSFET, Fairchild Semiconductor

MOSFET Transistors, ON Semi

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