STMicroelectronics MDmesh, SuperMESH Type N-Channel MOSFET, 9 A, 800 V Enhancement, 3-Pin TO-247 STW10NK80Z
- N° de stock RS:
- 485-8572
- Référence fabricant:
- STW10NK80Z
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 unité)*
5,38 €
(TVA exclue)
6,51 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité |
|---|---|
| 1 - 9 | 5,38 € |
| 10 - 24 | 4,87 € |
| 25 - 99 | 4,58 € |
| 100 - 499 | 3,65 € |
| 500 + | 3,25 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 485-8572
- Référence fabricant:
- STW10NK80Z
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Series | MDmesh, SuperMESH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Power Dissipation Pd | 160W | |
| Typical Gate Charge Qg @ Vgs | 72nC | |
| Forward Voltage Vf | 1.6V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 15.75mm | |
| Height | 20.15mm | |
| Width | 5.15 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9A | ||
Maximum Drain Source Voltage Vds 800V | ||
Series MDmesh, SuperMESH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Power Dissipation Pd 160W | ||
Typical Gate Charge Qg @ Vgs 72nC | ||
Forward Voltage Vf 1.6V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 15.75mm | ||
Height 20.15mm | ||
Width 5.15 mm | ||
Automotive Standard No | ||
N-Channel MDmesh™ SuperMESH™, 700V to 1200V, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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