STMicroelectronics STP80N Type N-Channel MOSFET, 5 A, 800 V Enhancement, 3-Pin TO-220 STP80N1K1K6
- N° de stock RS:
- 287-7047P
- Référence fabricant:
- STP80N1K1K6
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Consulter les options de prix de grosSous-total 20 unités (conditionné en tube)*
37,30 €
(TVA exclue)
45,14 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 298 unité(s) expédiée(s) à partir du 28 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 20 - 98 | 1,865 € |
| 100 - 198 | 1,42 € |
| 200 + | 1,26 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 287-7047P
- Référence fabricant:
- STP80N1K1K6
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220 | |
| Series | STP80N | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 62W | |
| Typical Gate Charge Qg @ Vgs | 5.7nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220 | ||
Series STP80N | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 62W | ||
Typical Gate Charge Qg @ Vgs 5.7nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The STMicroelectronics Power MOSFET is designed using the ultimate MDmesh K6 technology based on 20 years STMicroelectronics experience on super junction technology. The result is the best in class on resistance per area and gate charge for applications requiring superior power density and high efficiency.
Worldwide best FOM
Ultra low gate charge
100 percent avalanche tested
Liens connexes
- Coral G950-06809-01 for use with Raspberry Pi
- Siemens SIMATIC S7-1200 Series PLC CPU for Use with SIMATIC S7-1200 Series Transistor Output 2
- Carling Technologies Illuminated DPDT, On-(On) Rocker Switch Panel Mount
- SICK Encoder Collets for Use with DBS36E-BBxxxx
- Littelfuse Through Hole Gas Discharge Tube
- Igus GFM-0607-08 6mm Bore Plain Bearing, 7mm O.D
- Raspberry Pi QWERTY (Spain) Raspberry Pi Keyboard
- Coral Google Mini PCIe M.2 Accelerator B/M Development Kit G650-04686-01
