STMicroelectronics STripFETTM F7 Type N-Channel MOSFET, 100 A, 40 V Enhancement, 4-Pin ECOPACK STK184N4F7AG
- N° de stock RS:
- 273-5096
- Référence fabricant:
- STK184N4F7AG
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
3,71 €
(TVA exclue)
4,49 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 300 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 1,855 € | 3,71 € |
| 10 - 98 | 1,67 € | 3,34 € |
| 100 - 248 | 1,505 € | 3,01 € |
| 250 - 498 | 1,35 € | 2,70 € |
| 500 + | 1,22 € | 2,44 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-5096
- Référence fabricant:
- STK184N4F7AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 100A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | ECOPACK | |
| Series | STripFETTM F7 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 2.0mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 136W | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.2mm | |
| Standards/Approvals | AEC-Q101 | |
| Height | 1.2mm | |
| Width | 4.8 to 5 mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 100A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type ECOPACK | ||
Series STripFETTM F7 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 2.0mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 136W | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Maximum Operating Temperature 175°C | ||
Length 6.2mm | ||
Standards/Approvals AEC-Q101 | ||
Height 1.2mm | ||
Width 4.8 to 5 mm | ||
Automotive Standard AEC-Q101 | ||
The STMicroelectronics automotive-grade N-channel power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
AEC-Q101 qualified
Excellent FoM
High avalanche ruggedness
Liens connexes
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