STMicroelectronics Type N-Channel MOSFET, 30 A, 650 V Enhancement, 7-Pin Tape & Reel
- N° de stock RS:
- 261-5043P
- Référence fabricant:
- SCT055HU65G3AG
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total 2 unités (conditionné en bande continue)*
23,16 €
(TVA exclue)
28,02 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité |
|---|---|
| 2 + | 11,58 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 261-5043P
- Référence fabricant:
- SCT055HU65G3AG
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | Tape & Reel | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 3.5mm | |
| Width | 14 mm | |
| Length | 18.58mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type Tape & Reel | ||
Mount Type Surface | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 3.5mm | ||
Width 14 mm | ||
Length 18.58mm | ||
Automotive Standard No | ||
- Pays d'origine :
- MA
Automotive-grade silicon carbide Power MOSFET 650 V, 58 mOhm typ., 30 A in an HU3PAK package
The STMicroelectronics silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
Very low RDS(on) over the entire temperature range
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency