Infineon IPT Type N-Channel MOSFET, 143 A, 150 V, 8-Pin HSOG IPTG054N15NM5ATMA1
- N° de stock RS:
- 259-2738
- Référence fabricant:
- IPTG054N15NM5ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
5,98 €
(TVA exclue)
7,24 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 1 800 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 - 9 | 5,98 € |
| 10 - 24 | 5,69 € |
| 25 - 49 | 5,57 € |
| 50 - 99 | 5,21 € |
| 100 + | 4,79 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 259-2738
- Référence fabricant:
- IPTG054N15NM5ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 143A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Series | IPT | |
| Package Type | HSOG | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 55.4mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 250W | |
| Typical Gate Charge Qg @ Vgs | 58nC | |
| Forward Voltage Vf | 0.83V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 8.75 mm | |
| Length | 10.1mm | |
| Height | 2.4mm | |
| Standards/Approvals | RoHS, IEC 61249-2-21 | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 143A | ||
Maximum Drain Source Voltage Vds 150V | ||
Series IPT | ||
Package Type HSOG | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 55.4mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 250W | ||
Typical Gate Charge Qg @ Vgs 58nC | ||
Forward Voltage Vf 0.83V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 8.75 mm | ||
Length 10.1mm | ||
Height 2.4mm | ||
Standards/Approvals RoHS, IEC 61249-2-21 | ||
Automotive Standard No | ||
The Infineon OptiMOS 5 industrial power MOSFET devices in 80 V and 100 V are designed for synchronous rectification in telecom and server power supply application, but also the ideal choice for other applications such as solar, low voltage drives and laptop adapter. With a broad package portfolio, this family of power MOSFETs offers the industry’s lowest RDS(on). One of the biggest contributors to this industry leading figure of merit (FOM) is the low on-state resistance with a value as low as 2.7 mΩ in the SuperSO8 package, providing the highest level of power density and efficiency.
N-channel, normal level
Very low on-resistance RDS(on)
Superior thermal resistance
100% avalanche tested
Pb-free lead plating; RoHS compliant
Halogen-free according to IEC61249-2-21
Liens connexes
- Infineon IPT Type N-Channel MOSFET 150 V, 8-Pin HSOG
- Infineon IPT Type N-Channel MOSFET 150 V, 8-Pin HSOG
- Infineon IPT Type N-Channel MOSFET 150 V, 8-Pin HSOG IPTG063N15NM5ATMA1
- Infineon IPT Type N-Channel MOSFET 150 V, 16-Pin HDSOP
- Infineon IPT Type N-Channel MOSFET 150 V, 16-Pin HDSOP IPTC054N15NM5ATMA1
- Infineon IPT Type N-Channel MOSFET 150 V Enhancement, 8-Pin HSOF-8
- Infineon IPT Type N-Channel MOSFET 150 V Enhancement, 8-Pin HSOF-8 IPT054N15N5ATMA1
- Infineon IPT Type N-Channel MOSFET 150 V, 16-Pin HDSOP