Infineon iPB N-Channel MOSFET, 120 A, 40 V Enhancement TO-263 IPB120N04S402ATMA1
- N° de stock RS:
- 259-1550
- Référence fabricant:
- IPB120N04S402ATMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 2 unités)*
6,26 €
(TVA exclue)
7,58 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- Plus 2 996 unité(s) expédiée(s) à partir du 02 novembre 2026
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 3,13 € | 6,26 € |
| 20 - 48 | 2,825 € | 5,65 € |
| 50 - 98 | 2,66 € | 5,32 € |
| 100 - 198 | 2,59 € | 5,18 € |
| 200 + | 2,52 € | 5,04 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 259-1550
- Référence fabricant:
- IPB120N04S402ATMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 120A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-263 | |
| Series | iPB | |
| Mount Type | Surface | |
| Maximum Drain Source Resistance Rds | 1.80mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | +175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 120A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-263 | ||
Series iPB | ||
Mount Type Surface | ||
Maximum Drain Source Resistance Rds 1.80mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature +175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
Infineon iPB Series MOSFET, 40V Drain-Source Voltage, 120A Continuous Drain Current - IPB120N04S402ATMA1
This MOSFET is a high-current enhancement-mode N-channel device designed for surface-mounted power switching. It operates across a wide temperature range suitable for demanding environments and conforms to industry environmental directives and automotive stress standards.
Features and Benefits:
• 1.80mΩ low Rds(on) reduces conduction losses
• 40V voltage rating supports medium-voltage power stages
• 120A continuous drain current enables high-current delivery
• TO-263 surface package simplifies thermal management
• -55°C to +175°C range sustains extreme temperature operation
• 40V voltage rating supports medium-voltage power stages
• 120A continuous drain current enables high-current delivery
• TO-263 surface package simplifies thermal management
• -55°C to +175°C range sustains extreme temperature operation
Applications
• Suitable for automotive power conversion modules
• Ideal for industrial motor drive stages
• Used with high-current DC distribution systems
• Can be used for power switching in harsh environments
• Ideal for industrial motor drive stages
• Used with high-current DC distribution systems
• Can be used for power switching in harsh environments
What mounting style does it require?
It is intended for surface mounting in the TO-263 package format.
Which temperature extremes can it withstand during operation?
It is rated to function from -55°C up to +175°C.
Does it meet automotive qualification standards?
It complies with the AEC‑Q101 automotive qualification.
What channel configuration and mode does it use?
It is an enhancement-mode N-channel transistor.
Are there environmental restrictions for its materials?
It is RoHS-compliant.
Liens connexes
- Infineon iPB N-Channel MOSFET 40 V Enhancement TO-263
- Infineon iPB N-Channel MOSFET, 120 A Enhancement TO-263
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