Infineon HEXFET MOSFET, 8.7 A, 150 V, 5-Pin TO-220
- N° de stock RS:
- 258-3973
- Référence fabricant:
- IRFI4019H-117PXKMA1
- Fabricant:
- Infineon
Indisponible
RS n'aura plus ce produit en stock.
- N° de stock RS:
- 258-3973
- Référence fabricant:
- IRFI4019H-117PXKMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 8.7A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 8.7A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon digital audio MOSFET half-bridge is specifically designed for class D audio amplifier applications. It consists of two power MOSFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Further more, gate charge, body-diode reverse recovery, and internal gate resistance are optimized to improve key class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this half-bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.
Low RDS(on)
Dual N-Channel MOSFET
Integrated Half Bridge package
Low Qrr
Environmentally friendly
High power density
Integrated design
Board savings
Low EMI