Infineon IPW Type N-Channel MOSFET, 22 A, 600 V, 3-Pin TO-247

Offre groupée disponible

Sous-total (1 tube de 30 unités)*

122,85 €

(TVA exclue)

148,65 €

(TVA incluse)

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  • Plus 120 unité(s) expédiée(s) à partir du 29 décembre 2025
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Unité
Prix par unité
le tube*
30 - 304,095 €122,85 €
60 - 1203,89 €116,70 €
150 +3,726 €111,78 €

*Prix donné à titre indicatif

N° de stock RS:
258-3906
Référence fabricant:
IPW60R099C7XKSA1
Fabricant:
Infineon
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Marque

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

22A

Maximum Drain Source Voltage Vds

600V

Series

IPW

Package Type

TO-247

Pin Count

3

Maximum Drain Source Resistance Rds

99mΩ

Maximum Power Dissipation Pd

110W

Maximum Gate Source Voltage Vgs

30 V

Forward Voltage Vf

0.9V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

42nC

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon 600V CoolMOS C7 super junction MOSFET series offers a ∼50% reduction in turn-off losses compared to the CoolMOS CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The MOSFET is also a perfect match for high-power-density charger designs. Efficiency and TCO applications such as hyper data centres and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ∼10% for PSU energy loss.

Increased switching frequency

Best R (on)A in the world

Rugged body diode

Measure showing key parameter for light load and full load efficiency

Doubling the switching frequency will half the size of magnetic components

Smaller packages for same R DS(on)

Can be used in many more positions for both hard and soft switching topologies

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