Infineon IPA Type P-Channel MOSFET, 6.5 A, 600 V P, 3-Pin TO-263 IPA60R380P6XKSA1
- N° de stock RS:
- 258-3774
- Référence fabricant:
- IPA60R380P6XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
3,30 €
(TVA exclue)
4,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 484 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 1,65 € | 3,30 € |
| 20 - 48 | 1,465 € | 2,93 € |
| 50 - 98 | 1,37 € | 2,74 € |
| 100 - 198 | 1,265 € | 2,53 € |
| 200 + | 1,185 € | 2,37 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-3774
- Référence fabricant:
- IPA60R380P6XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-263 | |
| Series | IPA | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 380mΩ | |
| Channel Mode | P | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 31W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 19nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-263 | ||
Series IPA | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 380mΩ | ||
Channel Mode P | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 31W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 19nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon CoolMOS is are volutionary technology for high voltage power MOSFETs, designed according to the super junction principle and pioneered by Infineon Technologies. CoolMOS P6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching application seven more efficient, more compact, lighter and cooler.
Higher V th
Good body diode ruggedness
Optimized integrated R g
Improved dv/dt from 50V/ns
CoolMOS quality with over 12 years manufacturing experience in super junction technology
High robustness and better efficiency
Outstanding quality & reliability
Liens connexes
- Infineon IPA Type P-Channel MOSFET 600 V P, 3-Pin TO-263
- Infineon IPA Type P-Channel MOSFET, 24.8 A P TO-220
- Infineon IPA Type P-Channel MOSFET, 24.8 A P TO-220 IPA50R190CEXKSA2
- Infineon IPA Type N-Channel MOSFET 40 V, 3-Pin TO-263
- Infineon IPA Type N-Channel MOSFET 40 V, 7-Pin TO-263
- Infineon IPA Type N-Channel MOSFET 40 V, 3-Pin TO-263 IRF100S201
- Infineon IPA Type N-Channel MOSFET 40 V, 7-Pin TO-263 IRL40SC209
- Infineon IPA Type N-Channel MOSFET 600 V N TO-220
