Vishay IRFR9014 Type P-Channel Power MOSFET, -5.1 A, -60 V, 3-Pin TO-252

N° de stock RS:: 256-7312
Référence fabricant:: IRFR9014PBF
Fabricant:: Vishay

Vishay IRFR9014 Type P-Channel Power MOSFET, -5.1 A, -60 V, 3-Pin TO-252

Sous-total (1 tube de 75 unités)*

27,45 €

(TVA exclue)

33,225 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

En stock

2 775 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution

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Unité	Prix par unité	le tube*
75 +	0,366 €	27,45 €

*Prix donné à titre indicatif

N° de stock RS:: 256-7312
Référence fabricant:: IRFR9014PBF
Fabricant:: Vishay

Spécifications

Documentation technique

Législations et de normes

Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Vishay
	Channel Type	Type P
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	-5.1A
	Maximum Drain Source Voltage Vds	-60V
	Series	IRFR9014
	Package Type	TO-252
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	0.5Ω
	Maximum Gate Source Voltage Vgs	20V
	Forward Voltage Vf	-5.5V
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	25W
	Typical Gate Charge Qg @ Vgs	12nC
	Maximum Operating Temperature	+150°C
	Standards/Approvals	RoHS
	Height	2.38mm
	Automotive Standard	No

	Sélectionner tout
	Marque Vishay
	Channel Type Type P
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id -5.1A
	Maximum Drain Source Voltage Vds -60V
	Series IRFR9014
	Package Type TO-252
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 0.5Ω
	Maximum Gate Source Voltage Vgs 20V
	Forward Voltage Vf -5.5V
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 25W
	Typical Gate Charge Qg @ Vgs 12nC
	Maximum Operating Temperature +150°C
	Standards/Approvals RoHS
	Height 2.38mm
	Automotive Standard No

Vishay IRFR9014 Series Power MOSFET, -60V Maximum Drain Source Voltage, 25W Maximum Power Dissipation - IRFR9014PBF

This power MOSFET is a P-channel device designed for switching and amplification tasks within industrial electronic systems. It operates at negative drain-source voltages up to -60V and supports moderate continuous currents, making it suitable for controlled power transfer in surface-mounted assemblies. The component is supplied in a TO-252 package and is intended for applications where compact, board-mounted power transistors are required.

Features and Benefits:

• Low Rds(on) 0.5 Ω providing reduced conduction losses
• Maximum continuous drain current -5.1 A enabling sustained load handling
• Rated Vgs up to 20V allowing robust gate-drive margins
• Typical gate charge 12 nC facilitating Faster switching dynamics
• Maximum power dissipation 25W supporting thermal headroom
• Operating range -55 °C to +150 °C tolerating harsh temperatures

Applications

• Suitable for high-side switching in control modules
• Ideal for power management in automation equipment
• Used with motor drivers requiring P-channel switching
• Can be used for load protection in electrical assemblies
• Suitable for Compact surface-mount power boards

What package should I expect for footprint planning?

The device is supplied in a TO-252 surface-mount package with three pins for direct PCB mounting.

How does its gate charge affect switching design?

A 12 nC gate charge determines the required drive energy and influences switching losses and driver selection for efficient timing.

What thermal limits are relevant for cooling strategies?

The component accepts up to 25W dissipation and a maximum junction temperature of +150 °C, so heat-sinking and PCB copper should be sized accordingly.

What voltage and current boundaries must protection circuits respect?

Design protective measures for a maximum drain-source voltage of -60V and continuous drain current of -5.1 A to prevent overstress.

Are there any handling considerations for gate and pins?

Observe the maximum gate-source rating of 20V to avoid gate oxide damage and ensure ESD precautions during assembly.