DiodesZetex Type N-Channel MOSFET, 25 A, 100 V PowerDI5060-8
- N° de stock RS:
- 254-8659
- Référence fabricant:
- DMTH10H038SPDWQ-13
- Fabricant:
- DiodesZetex
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 254-8659
- Référence fabricant:
- DMTH10H038SPDWQ-13
- Fabricant:
- DiodesZetex
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Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 25A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | PowerDI5060-8 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.7W | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 25A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type PowerDI5060-8 | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.7W | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The DiodeZetex enhancement mode MOSFET has been designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in backlighting, dc to dc converters and power management functi
Low on resistance
Wet table flank for improved optical inspection
Low input capacitance
Halogen and antimony free
Liens connexes
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