Vishay Type N-Channel MOSFET, 126 A, 30 V Depletion, 8-Pin PowerPAK SO-8DC SIDR5102EP-T1-RE3
- N° de stock RS:
- 252-0251
- Référence fabricant:
- SIDR5102EP-T1-RE3
- Fabricant:
- Vishay
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
7,54 €
(TVA exclue)
9,12 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En voie de retrait du marché
- 5 890 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 18 | 3,77 € | 7,54 € |
| 20 - 98 | 3,545 € | 7,09 € |
| 100 - 198 | 3,21 € | 6,42 € |
| 200 - 498 | 3,02 € | 6,04 € |
| 500 + | 2,825 € | 5,65 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 252-0251
- Référence fabricant:
- SIDR5102EP-T1-RE3
- Fabricant:
- Vishay
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 126A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PowerPAK SO-8DC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.01mΩ | |
| Channel Mode | Depletion | |
| Maximum Power Dissipation Pd | 150W | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 46.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.15 mm | |
| Length | 6.15mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 126A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PowerPAK SO-8DC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.01mΩ | ||
Channel Mode Depletion | ||
Maximum Power Dissipation Pd 150W | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 46.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 5.15 mm | ||
Length 6.15mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Vishay siliconix MOSFET product line includes a diverse range of advanced technologies. MOSFETs are transistor devices which are controlled by a capacitor. The field effect means that they are controlled by voltage. N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.
TrenchFET Gen V power MOSFET
Very low RDS - Qg figure-of-merit (FOM)
Tuned for the lowest RDS - Qoss FOM
100 % Rg and UIS tested
Liens connexes
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