Infineon Type N-Channel MOSFET, 400 A, 1200 V Enhancement, 8-Pin AG-EASY3B FF2MR12W3M1HB11BPSA1
- N° de stock RS:
- 250-0223
- Référence fabricant:
- FF2MR12W3M1HB11BPSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
425,57 €
(TVA exclue)
514,94 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité |
|---|---|
| 1 - 1 | 425,57 € |
| 2 + | 414,94 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 250-0223
- Référence fabricant:
- FF2MR12W3M1HB11BPSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 400A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | AG-EASY3B | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.44mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 81W | |
| Maximum Gate Source Voltage Vgs | -10 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60747, 60749 and 60068 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 400A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type AG-EASY3B | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.44mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 81W | ||
Maximum Gate Source Voltage Vgs -10 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60747, 60749 and 60068 | ||
Automotive Standard AEC-Q101 | ||
The Infineon Half bridge CoolSiC MOSFET EasyDUAL™ 3B 1200 V / 1.44 mΩ halfbridge module with CoolSiC™ MOSFET with enhanced generation 1, integrated NTC temperature sensor and PressFIT Contact Technology.
Low switching losses
High current density
Low inductive design
PressFIT contact technology
Integrated NTC temperature sensor
Rugged mounting due to integrated mounting clamps
Liens connexes
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