Infineon AUIRFS Type N-Channel MOSFET, 195 A, 40 V, 3-Pin TO-220

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N° de stock RS:
249-6871
Référence fabricant:
AUIRFB8409
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

195A

Maximum Drain Source Voltage Vds

40V

Package Type

TO-220

Series

AUIRFS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3mΩ

Maximum Power Dissipation Pd

81W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

80nC

Forward Voltage Vf

1.3V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

AEC-Q101

The Infineon HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications.

Advance planner technology

LowOn-Resistance

Dynamic dV/dT Rating

175 C operating temperature

Fast switching

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