DiodesZetex Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin PowerDI3333-8 DMT32M4LFG-7

Offre groupée disponible

Sous-total (1 paquet de 5 unités)*

2,58 €

(TVA exclue)

3,12 €

(TVA incluse)

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Dernier stock RS
  • 1 985 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité
Prix par unité
le paquet*
5 - 450,516 €2,58 €
50 - 950,444 €2,22 €
100 - 2450,372 €1,86 €
250 - 9950,366 €1,83 €
1000 +0,358 €1,79 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
246-7548
Référence fabricant:
DMT32M4LFG-7
Fabricant:
DiodesZetex
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Marque

DiodesZetex

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Package Type

PowerDI3333-8

Pin Count

8

Maximum Drain Source Resistance Rds

0.028mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

1.73W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

8 V

Forward Voltage Vf

1.2V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Automotive Standard

AEC-Q101

The DiodesZetex makes an N-channel enhancement mode MOSFET, designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. It is a green device and, totally Lead, halogen and Antimony free. This MOSFET comes in powerDI3333-8 packaging. It offers fast switching and high efficiency. Its 100% unclamped inductive switching ensures more reliable and robust end application. It has an excellent Qgd xRDS(ON) product (FOM) and advanced technology for DC-DC conversion.

Maximum drain to source voltage is 30 V and maximum gate to source voltage is ±20 V It provides small form factor thermally and efficient package enables higher density end products It occupies just 33% of the board area occupied by SO-8 enabling smaller end product

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